Dual NPN pre-biased in a SOT-363 footprint
The RN1909,LXHF(CT: Two NPN pre-biased transistors in a single 6-pin US6 package (SOT-363 equivalent). The integrated bias network — 47 kΩ base resistor (R1) and 22 kΩ base-emitter resistor (R2) per transistor — eliminates two external resistors per channel from the BOM, saving board space and placement cost. Surface-mount assembly on standard SOT-363 land patterns. The 50 V collector-emitter breakdown and 100 mA continuous collector current suit low-side switching and signal-level loads up to that voltage and current ceiling.
200 mW power dissipation and AEC-Q101 qualification
Maximum power dissipation is 200 mW across both transistors — the thermal budget limits simultaneous conduction. The 250 MHz transition frequency (fT) supports switching up to the low-MHz range for logic-level interfaces and driver stages. AEC-Q101 qualified per the description field, meaning the part is screened for automotive-grade reliability — temperature cycling, high-temperature reverse bias, and ESD robustness per the AEC-Q101 stress tests. The 70 minimum DC current gain at 10 mA, 5 V gives consistent drive capability across the operating point. Maximum VCE(sat) of 300 mV at 250 µA base current and 5 mA collector current — low enough to avoid significant voltage drop in saturated switching, keeping the output rail close to the supply.
Available to order against an RFQ through independent distribution; current pricing and lead time confirmed at quote.