Toshiba Semiconductor RN1907FE,LXHF(CT — Microcontrollers & Processors (MCU / MPU / DSP)
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Toshiba Semiconductor / Microcontrollers & Processors (MCU / MPU / DSP)

RN1907FE,LXHF(CT Dual NPN Pre-Biased Transistor, AEC-Q101

MPN RN1907FE,LXHF(CT
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Toshiba RN1907FE,LXHF(CT, Automotive AEC-Q101, 2 NPN - Pre-Biased (Dual), 50 V, 100 mA, 250 MHz, SOT-563, Surface Mount.

In Stock: 8,000 pcs
MOQ: 1 pcs
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[SPEC] Essential Parameters Snapshot Full Specifications (14)
Package / Case SOT-563, SOT-666

Full Technical Specifications

14 Parameters
RN1907FE,LXHF(CT specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max100mW
Frequency - transition250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA
Series Sibling Variants

Toshiba Semiconductor Automotive, AEC-Q101 Series Models

Sibling variants, package options, and speed/density grades in this Toshiba Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

Dual NPN pre-biased transistor for automotive loads

Each transistor integrates a 10 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating two external resistors per channel and reducing placement cost on the line. The 250 MHz transition frequency and 100 mA collector current rating suit it for driving relays, solenoids, and indicator loads in body-control modules and transmission controllers.

Resistor network saves board space

The RN1907FE uses a 10 kΩ base resistor and 47 kΩ emitter-base resistor per transistor. This fixed ratio sets the base current for a given collector current without external bias components. Compared to the RN1702,LF which uses 10 kΩ / 10 kΩ, the RN1907FE provides a higher emitter-base resistance, reducing the off-state leakage current through the base-emitter junction — a useful difference when the transistor must stay off under high-temperature soak.

Frequently asked questions

Is RN1907FE,LXHF(CT automotive AEC-Q101 qualified?

Yes, the RN1907FE,LXHF(CT is listed under the Automotive, AEC-Q101 series, confirming it meets the AEC-Q101 qualification for discrete semiconductors used in automotive environments.

What is the RN1907FE,LXHF(CT equivalent or cross reference?

The RN1908(T5L,F,T) is a close functional equivalent with the same dual NPN pre-biased topology and 250 MHz fT, but uses a 22 kΩ base resistor instead of 10 kΩ. The RN1702,LF shares the 10 kΩ base resistor but uses a 10 kΩ emitter-base resistor rather than 47 kΩ. Neither is a drop-in replacement without checking the bias resistor ratio against the circuit requirements.

What is the RN1907FE,LXHF(CT datasheet and where can I download it?

The datasheet for the RN1907FE,LXHF(CT is available from Toshiba's official website or through the product page on this distributor's site. It contains the full electrical characteristics, package dimensions, and application notes for the SOT-563 package.

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