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Toshiba Semiconductor RN1711JE(TE85L,F)

RN1711JE(TE85L,F) - Toshiba Semiconductor

MPNRN1711JE(TE85L,F)
End of Life

TRANSISTOR NPN X2 BRT Q1BSR10KOH

$0.43Ref. price · indicative, final on quote
PackagingSOT-553
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RN1711JE(TE85L,F) specifications
ParameterValue
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 5V
Power - max100mW
Frequency250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-553
Resistor - base (R1)10kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA