Toshiba Semiconductor RN1315,LF, NPN pre-biased transistor, 50 V Vce, 100 mA Ic, SC-70 (SOT-323) surface-mount package, built-in bias resistors R1=2.2 kΩ, R2=10 kΩ.
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 500nA |
| DC current gain (hFE) (Min) @ ic, vce | 50 @ 10mA, 5V |
| Power - max | 100 mW |
| Frequency - transition | 250 MHz |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | SC-70, SOT-323 |
| Resistor - base (R1) | 2.2 kOhms |
| Resistor - emitter base (R2) | 10 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 250µA, 5mA |
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The built-in bias resistors — 2.2 kΩ base (R1) and 10 kΩ emitter-base (R2) — eliminate two external passives from the BOM.
Housed in the SC-70 (SOT-323) package, the RN1315,LF occupies minimal board space and suits high-density designs. The 250 MHz transition frequency supports switching applications up to low-MHz range, such as gate drive buffers or logic-level translators.
The RN1417(TE85L,F) is a near-functional peer — same NPN pre-biased topology, same 50 V Vce and 100 mA Ic rating, same SC-70 package. The key difference is the bias resistor values: RN1417 uses R1=10 kΩ and R2=4.7 kΩ vs. the RN1315's 2.2 kΩ / 10 kΩ. The resistor ratio shifts the switching threshold, so confirm the base-drive requirement before substituting.
Typical uses include low-current switching, inverter gate drive buffers, logic-level translators, and general-purpose digital transistor functions where the built-in bias resistors simplify PCB layout and reduce component count. The 50 V rating and 100 mA current handle 24 V industrial logic rails with margin.