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HN1B04FE-Y~6LF

Toshiba Semiconductor HN1B04FE-Y,LF

MPNHN1B04FE-Y,LF
End of Life

TRANS NPN/PNP 50V 0.15A ES6

$0.31Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HN1B04FE-Y,LF specifications
ParameterValue
MountingSurface Mount
FET typeNPN, PNP
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 2mA, 6V
Power - max100mW
Frequency - transition80MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Vce saturation (Max) @ ib, ic250mV @ 10mA, 100mA