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Toshiba Semiconductor HN1B01FU-Y,LXHF — Discrete Semiconductors

Toshiba HN1B01FU-Y,LXHF NPN/PNP transistor, 150mA, 50V

MPNHN1B01FU-Y,LXHF
End of Life

Toshiba Semiconductor HN1B01FU-Y,LXHF complementary NPN/PNP transistor, 50 V Vceo, 150 mA Ic, 200 mW, AEC-Q101, SOT-363 (US6), Tape & Reel.

$0.36Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

HN1B01FU-Y,LXHF specifications
ParameterValue
MountingSurface Mount
FET typeNPN, PNP
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 2mA, 6V
Power - max200mW
Frequency - transition120MHz, 150MHz
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
QualificationAEC-Q101
Case6-TSSOP, SC-88, SOT-363
Vce saturation (Max) @ ib, ic300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA

Product details

Complementary pair in one tiny package

The HN1B01FU-Y,LXHF packs an NPN and a PNP transistor into a single SOT-363 (US6) package — 150 mA collector current each, 50 V collector-emitter breakdown. That covers a lot of small-signal switching and pre-driver chores in automotive modules where board space is tight and you want one BOM line instead of two. AEC-Q101 qualification (Grade Automotive) means the part is screened for the -40 to +125 °C ambient range typical of under-hood and chassis-mount electronics — not a commodity general-purpose transistor.

Saturation and gain — what the numbers mean for your design

Vce(sat) is 300 mV max for the NPN and 250 mV max for the PNP at 10 mA base / 100 mA collector — that is a solid saturated switch at moderate load. Transition frequency is 120 MHz (NPN) and 150 MHz (PNP) — fine for PWM up to a few hundred kHz or linear amplification below 10 MHz. Not an RF part, but adequate for gate-drive buffering, relay coil kickback clamping, and sensor output conditioning.

SOT-363 (also called SC-88 or US6) is a 6-lead surface-mount package with a 1.25 mm body width and 0.65 mm lead pitch. The footprint is standard — reflow profiles for this package are well-documented, and the low 200 mW power dissipation means no special thermal management is needed on a typical FR4 board.

Active lifecycle — sourcing posture

Listed as Active by Toshiba Semiconductor.

Frequently asked questions

Is the HN1B01FU-Y,LXHF automotive qualified?

Yes, it carries AEC-Q101 qualification and is listed with Grade Automotive, making it suitable for under-hood and chassis-mount applications in the -40 to +125 °C ambient range.

What is the maximum collector current and voltage for this transistor pair?

Each transistor is rated for 150 mA continuous collector current and 50 V collector-emitter breakdown (Vceo).