Skip to main content

Toshiba Semiconductor and StorageDiscrete Semiconductors

Toshiba Semiconductor and Storage Discrete Semiconductors — 88 part numbers with specifications and datasheets. Filter by key specs and request a quote on ICBOMS.

Base Product Number
2SA1943 · 2SC1627 · 2SC2229 · 2SC2235
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A, 5V · 70 @ 50mA, 2V · 70 @ 10mA, 5V · 80 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A · 400mV @ 20mA, 200A · 500mV @ 1mA, 10mA · 1V @ 50mA, 500mA
Current - Collector (Ic) (Max)
15 A · 400 mA · 50 mA · 800 mA
Voltage - Collector Emitter Breakdown (Max)
230 V · 80 V · 150 V · 120 V
Frequency - Transition
30MHz · 100MHz · 120MHz · 50MHz
Package / Case
TO-3P-3, SC-65-3 · TO-3PL · TO-226-3, TO-92-3 Long Body · TO-236-3, SC-59, SOT-23-3
Power - Max
150 W · 800 mW · 900 mW · 150 mW

Other manufacturers