Toshiba Semiconductor and Storage 2SK2009TE85LF
MPN2SK2009TE85LF
Active
MOSFET N-CH 30V 200MA SC59-3
$0.5400Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSRoHS Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 2.5V |
| Current - continuous drain (Id) @ 25°C | 200mA (Ta) |
| Power dissipation | 200mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1.5V @ 100µA |
| Rds on (Max) @ id, vgs | 2Ohm @ 50MA, 2.5V |
| Input capacitance (Ciss) (Max) @ vds | 70 pF @ 3 V |