2SC5712(TE12L,F)

Toshiba Semiconductor and Storage

TRANS NPN 50V 3A PW-MINI

Toshiba Semiconductor and Storage 2SC5712(TE12L,F)
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MOQ 5 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2SC5712(TE12L,F) specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown50 V
Current - collector (Ic)3 A
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce400 @ 300mA, 2V
Power - max1 W
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-243AA
Vce saturation (Max) @ ib, ic140mV @ 20mA, 1A
2SC5712(TE12L,F)
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