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Toshiba Semiconductor and Storage 2SC3326-B,LF — Discrete Semiconductors

2SC3326-B,LF NPN BJT 20V 300mA TO-236 — Toshiba | ICBOMS

MPN2SC3326-B,LF
Active

TRANS NPN 20V 0.3A TO236

$0.3900Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SC3326-B,LF specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown20 V
Current - collector (Ic)300 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce350 @ 4mA, 2V
Power - max150 mW
Frequency30MHz
Operating temperature125°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic100mV @ 3mA, 30mA