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Toshiba Semiconductor and Storage 2SA1943N(S1,E,S) — Discrete Semiconductors

Toshiba Semiconductor and Storage 2SA1943N(S1,E,S)

MPN2SA1943N(S1,E,S)
Active

TRANS PNP 230V 15A TO3P

$2.3900Ref. price · indicative, final on quote
PackagingTO-3P-3, SC-65-3
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SA1943N(S1,E,S) specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown230 V
Current - collector (Ic)15 A
Current - collector cutoff5µA (ICBO)
DC current gain (hFE) (Min) @ ic, vce80 @ 1A, 5V
Power - max150 W
Frequency30MHz
Operating temperature150°C (TJ)
PackageTube
CaseTO-3P-3, SC-65-3
Vce saturation (Max) @ ib, ic3V @ 800mA, 8A