2SC6076(TE16L1,NV)

Toshiba Semiconductor and Storage

TRANS NPN 80V 3A PW-MOLD

Toshiba Semiconductor and Storage 2SC6076(TE16L1,NV)
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

2SC6076(TE16L1,NV) specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown80 V
Current - collector (Ic)3 A
Current - collector cutoff1µA (ICBO)
DC current gain (hFE) (Min) @ ic, vce180 @ 500mA, 2V
Power - max10 W
Frequency - transition150MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vce saturation (Max) @ ib, ic500mV @ 100mA, 1A
2SC6076(TE16L1,NV)
[ALLOC] verified
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