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SN75372DR

SN75372DR Low-Side Gate Driver, 500mA, 8-SOIC

MPNSN75372DR
End of Life

Texas Instruments SN75372DR, dual low-side N-Channel MOSFET gate driver, inverting input, synchronous channel, 500mA peak source/sink, 4.75V-24V supply, 8-SOIC surface mount package.

$3.01Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SN75372DR specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeInverting
Channel typeSynchronous
MountingSurface Mount
Voltage4.75V ~ 5.25V, 4.75V ~ 24V
Logic voltage - VIL, VIH0.8V, 2V
Current - peak output (Source, sink)500mA, 500mA
Operating temperature0°C ~ 70°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationLow-Side

Product details

Dual low-side driver for N-Channel MOSFETs

The Texas Instruments SN75372DR is a dual low-side gate driver designed to drive N-Channel MOSFETs in synchronous configurations. Each channel delivers 500 mA peak source and sink current, enough to charge and discharge the gate capacitance of medium-power FETs without excessive switching losses. It accepts a split supply: a 4.75V to 5.25V rail for the logic interface and a separate 4.75V to 24V rail for the gate drive output stage. This lets you run the control logic from a standard 5V bus while driving the MOSFET gate at a higher voltage to reduce Rds(on).

Peak current and switching performance

With 500 mA peak source and sink, the driver can switch a typical 10 nC gate load in about 20 ns — fast enough for PWM frequencies up to several hundred kHz in a motor drive or DC-DC converter. The inverting input means the output goes high when the input goes low, so check the logic polarity against your controller. No level-shifting resistors needed between a 3.3V MCU and the driver input.

Frequently asked questions

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