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Texas Instruments OPA818IDRGT — Memory (DRAM / SRAM / Flash / EEPROM)

TI OPA818IDRGT JFET Op-Amp, 2.7 GHz GBWP, 1400V/µs

MPNOPA818IDRGT
End of Life

Texas Instruments OPA818IDRGT JFET operational amplifier, single circuit, 2.7 GHz gain-bandwidth product, 1400 V/µs slew rate, 8-WFDFN exposed pad, 8-SON (3x3) package.

$9.85Ref. price · indicative, final on quote
Packaging8-WFDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

OPA818IDRGT specifications
ParameterValue
MountingSurface Mount
Amplifier typeJ-FET
Voltage - input offset1.25 mV
Voltage - supply span13 V
Current - supply26.5mA
Current - input bias25 pA
Current - output (Channel)110 mA
Operating temperature-40°C ~ 125°C (TA)
-3db bandwidth765 MHz
Gain bandwidth product2.7 GHz
PackageTape & Reel (TR); Cut Tape (CT)
Slew rate1400V/µs
Case8-WFDFN Exposed Pad
Number of circuits1

Product details

2.7 GHz GBWP, 1400 V/µs — what the speed ratings mean for the signal chain

The OPA818IDRGT is a single-channel JFET-input operational amplifier from Texas Instruments, offering a 2.7 GHz gain-bandwidth product and a 1400 V/µs slew rate. These two numbers together define the large-signal and small-signal bandwidth: the GBWP sets the closed-loop bandwidth at a given gain (e.g., 270 MHz at a gain of 10), while the slew rate determines how fast the output can swing under a large step input — 1400 V/µs means it slews 1.4 V in 1 ns, critical for driving ADC inputs or pulse-recovery stages where the signal edge must not be the limiting factor. The -3 dB bandwidth of 765 MHz confirms the small-signal flatness extends well into the UHF band. For a photodiode transimpedance amplifier or a high-speed data acquisition front-end, this bandwidth supports settling times in the sub-nanosecond range, provided the feedback network and layout do not add parasitic poles.

JFET input stage — bias current and noise floor for high-impedance sources

The JFET input stage gives a typical input bias current of 25 pA at 25 °C. This is the key spec for a sensor front-end: a 10 MΩ source impedance sees only 250 µV of offset from bias current, negligible compared to the 1.25 mV typical input offset voltage. The bias current doubles roughly every 10 °C, so at 85 °C it sits near 400 pA — still acceptable for most high-impedance paths, but worth derating for a 100 MΩ piezoelectric sensor. Supply current is 26.5 mA typical, drawn from a single supply span of 6 V to 13 V. The 110 mA output current per channel gives enough drive to swing into a 50 Ω load or a 100 Ω feedback network without significant gain compression.

Package and thermal — 8-SON with exposed pad

Housed in an 8-WFDFN exposed-pad package (3×3 mm body, 8-SON), the OPA818IDRGT requires a thermal-land pattern on the PCB. Tape & Reel (TR) and Cut Tape (CT) options are available for production and prototyping quantities respectively.

Lifecycle and supply-chain posture

For BOM planning, the active status means no imminent obsolescence risk.

Frequently asked questions

What is the OPA818IDRGT's slew rate and what does it mean for my design?

The listed slew rate is 1400 V/µs. This means the output can change by 1.4 V in one nanosecond. For a 2 V peak-to-peak output swing, the full-power bandwidth is roughly 110 MHz — above that, the output slew-rate limits the undistorted swing. It is suited for driving high-speed ADCs, pulse amplifiers, and video distribution where fast edge rates are required.

Is the OPA818IDRGT RoHS compliant?

Yes, the OPA818IDRGT is ROHS3 Compliant per Texas Instruments' lifecycle designation.

What package does the OPA818IDRGT come in?

The OPA818IDRGT is supplied in an 8-WFDFN exposed-pad package, also designated as 8-SON with a 3×3 mm body. It is available in Tape & Reel (TR) or Cut Tape (CT) packaging options.