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Texas Instruments CD4023BM — Analog & Data Acquisition

CD4023BM Texas Instruments 4000B NAND Gate, 3V-18V, -55°C

MPNCD4023BM
End of Life

Texas Instruments 4000B series CMOS triple 3-input NAND gate, CD4023BM, 3V to 18V supply, -55°C to 125°C, 1 µA quiescent, 14-SOIC package.

$1.37Ref. price · indicative, final on quote
Packaging14-SOIC (0.154", 3.90mm Width)
Series4000B
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CD4023BM specifications
ParameterValue
Series4000B
Logic typeNAND Gate
MountingSurface Mount
Supply voltage3V ~ 18V
Current - quiescent1 µA
Current - output high, low3.4mA, 3.4mA
I/O channels3
Operating temperature-55°C ~ 125°C
PackageBulk
Case14-SOIC (0.154\", 3.90mm Width)
Number of circuits3
Input logic level - low1.5V ~ 4V
Input logic level - high3.5V ~ 11V
Max propagation delay @ v, max CL90ns @ 15V, 50pF

Product details

Wide-supply CMOS triple NAND for rugged environments

The CD4023BM is a Texas Instruments 4000B-series CMOS triple 3-input NAND gate in a 14-SOIC package. Its 3V to 18V supply range covers everything from a 3.3V logic rail to a 12V industrial bus without a separate regulator — one less BOM line to qualify. Rated for -55°C to 125°C operating temperature, this gate is suited for avionics, downhole instrumentation, and engine-bay control modules where the ambient exceeds commercial-grade limits. The 1 µA max quiescent current means it adds negligible draw in battery-backed or always-on sections. Each of the three independent 3-input NAND gates sources or sinks 3.4 mA at the output — enough to drive a downstream CMOS input or a low-power LED indicator without a buffer. Propagation delay is 90 ns typical at 15V into a 50 pF load.

Frequently asked questions

What temperature range does CD4023BM support?

It is rated for -55°C to 125°C, making it suitable for military, aerospace, and harsh industrial environments where commercial-grade parts would fail.

How many NAND gates are in the CD4023BM?

It contains three independent 3-input NAND gates in a single 14-SOIC package, each capable of sinking or sourcing 3.4 mA.