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Taiwan Semiconductor Corporation TSM019NH04LCR RLG — Discrete Semiconductors

Taiwan Semiconductor Corporation TSM019NH04LCR RLG

MPNTSM019NH04LCR RLG
Active

40V, 100A, SINGLE N-CHANNEL POWE

$6.3Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesPerFET™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TSM019NH04LCR RLG specifications
ParameterValue
SeriesPerFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Ta), 100A (Tc)
Power dissipation150W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs1.9mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs104 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6282 pF @ 25 V