TSM019NH04LCR RLG
Taiwan Semiconductor Corporation
Tape & Reel (TR); Cut Tape (CT)PerFET™N-Channel
Ref. price$6.3
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Taiwan Semiconductor Corporation TSM0 Discrete Semiconductors Series
6 variants · Taiwan Semiconductor Corporation
About the Taiwan Semiconductor Corporation TSM0 Discrete Semiconductors Series
The Taiwan Semiconductor Corporation TSM0 Discrete Semiconductors Series series groups 6 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of 8-PowerTDFN, drain to source voltage of 40 V and drive voltage (Max rds on, min rds on) of 4.5V, 10V. Variants differ by current - continuous drain (Id) @ 25°C, gate charge (Qg) (Max) @ vgs and input capacitance (Ciss) (Max) @ vds, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below.
Select a variant by
- Current - continuous drain (Id) @ 25°C
- 15A (Ta), 54A (Tc) · 35A (Ta), 100A (Tc)
- Gate charge (Qg) (Max) @ vgs
- 23 nC @ 10 V · 104 nC @ 10 V
- Input capacitance (Ciss) (Max) @ vds
- 1446 pF @ 25 V · 6282 pF @ 25 V
- Power dissipation
- 46.8W (Tc) · 150W (Tc)
- Rds on (Max) @ id, vgs
- 1.9mOhm @ 50A, 10V · 7mOhm @ 27A, 10V
Shared specifications
- Case
- 8-PowerTDFN
- Drain to source voltage
- 40 V
- Drive voltage (Max rds on, min rds on)
- 4.5V, 10V
- FET type
- N-Channel
- Mounting
- Surface Mount
- Operating temperature
- -55°C ~ 175°C (TJ)
- Package
- Tape & Reel (TR); Cut Tape (CT)
- Technology
- MOSFET (Metal Oxide)
- Vgs
- ±16V
- Vgs(th) (Max) @ id
- 2.2V @ 250µA
Variant comparison
| Parameter | TSM019NH04LCR RLG | TSM070NH04LCR RLG |
|---|---|---|
| Current - continuous drain (Id) @ 25°C | 35A (Ta), 100A (Tc) | 15A (Ta), 54A (Tc) |
| Gate charge (Qg) (Max) @ vgs | 104 nC @ 10 V | 23 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6282 pF @ 25 V | 1446 pF @ 25 V |
| Power dissipation | 150W (Tc) | 46.8W (Tc) |
| Rds on (Max) @ id, vgs | 1.9mOhm @ 50A, 10V | 7mOhm @ 27A, 10V |
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