Taiwan Semiconductor Corporation ES1JH
MPNES1JH
Active
DIODE GEN PURP 600V 1A DO214AC
$0.3800Ref. price · indicative, final on quote
PackagingDO-214AC, SMA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101 |
| Diode type | Standard |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 1 A |
| Current - reverse leakage @ vr | 5 µA @ 600 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -55°C~150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR) |
| Case | DO-214AC, SMA |
| Capacitance @ vr, | 16pF @ 4V, 1MHz |
| Reverse recovery time | 35 ns |