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Taiwan Semiconductor Corporation ES1JFL — Discrete Semiconductors

ES1JFL Fast Recovery Diode 600V 1A SOD-123F

MPNES1JFL
Active

DIODE GEN PURP 600V 1A SOD123F

$0.3300Ref. price · indicative, final on quote
PackagingSOD-123F
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ES1JFL specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 1 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseSOD-123F
Capacitance @ vr,8pF @ 4V, 1MHz
Reverse recovery time35 ns