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Taiwan Semiconductor Corporation 1N5820 B0G — Discrete Semiconductors

Taiwan Semiconductor Corporation 1N5820 B0G

MPN1N5820 B0G
Active
$0.3900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5820 B0G specifications
ParameterValue
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)20 V
Voltage - forward (Vf) (Max) @ if475 mV @ 3 A
Current - reverse leakage @ vr500 µA @ 20 V
Current - average rectified3A
Operating temperature - junction-55°C~125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseDO-201AD, Axial
Capacitance @ vr,200pF @ 4V, 1MHz