Taiwan Semiconductor Corporation 1N5817HB0G
MPN1N5817HB0G
Active
$0.4200Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 20 V |
| Voltage - forward (Vf) (Max) @ if | 450 mV @ 1 A |
| Current - reverse leakage @ vr | 1 mA @ 20 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -55°C ~ 125°C |
| Grade | Automotive |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Bulk |
| Technology | Schottky |
| Qualification | AEC-Q101 |
| Case | DO-204AL, DO-41, Axial |
| Capacitance @ vr, | 55pF @ 4V, 1MHz |