650V, 76A — the switching loss trade-off
The R6576ENZ4C13 is a 650V, 76A N-channel power MOSFET in a TO-247 through-hole package, built on ROHM's low-noise planar stripe process. The 46mOhm typical Rds(on) at 44.4A with 10V gate drive gives a conduction loss of about 90W at full rated current — budget the junction temperature rise against the 735W Tc-rated dissipation ceiling.
Gate charge and switching speed
Total gate charge Qg is 260nC at Vgs=10V, and the input capacitance Ciss measures 6500pF at Vds=25V. For a hard-switched converter running at 50kHz, the gate driver must supply roughly 13mA average current just to charge and discharge the gate — a standard 1A driver handles it easily, but the 260nC figure sets the switching loss floor at higher frequencies. The 4V maximum gate threshold at 2.96mA drain current means the device is fully enhanced with a standard 10V gate drive, but the 4V Vgs(th) ceiling also means it will not fully turn on with a 5V logic-level gate signal — plan for a dedicated gate-driver rail or bootstrap supply above 10V.
Package and thermal path
Housed in a TO-247-3 (supplier device package TO-247), the through-hole mounting gives a low-inductance Kelvin source connection option for the gate-drive return — the large backside tab is the drain, and the copper pad area on the heatsink sets the junction-to-case thermal resistance. The 150°C maximum junction temperature allows a 50°C margin above a typical 100°C case temperature at full rated current.