SiC Schottky with zero recovery — what that means for a switching supply
The SCS220AE2GC11 is a Silicon Carbide Schottky diode in a common-cathode dual-diode configuration, rated 650 V reverse voltage and 10 A average rectified current per diode (20 A total for the pair). Its zero reverse recovery time (trr = 0 ns) eliminates the switching losses that plague silicon ultrafast diodes in hard-switched topologies — the diode simply stops conducting when the voltage reverses, with no stored charge to sweep out. That makes it a direct fit for power-factor-correction stages, boost converters, and inverter freewheel diodes where every nanosecond of recovery adds heat to the die and the heatsink.
Package and thermal budget
Housed in a TO-247-3 through-hole package (supplier device package TO-247N), the part mounts into a standard TO-247 footprint with the tab as the common cathode — the same mechanical outline as many 600 V silicon diodes, so a board layout designed for a TO-247 dual-diode can accept this SiC part without a PCB change. Forward voltage is 1.55 V maximum at 10 A per diode — higher than a comparable silicon Schottky at low current, but the zero-recovery loss more than compensates at switching frequencies above 50 kHz.