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ROHM Semiconductor R6524KNXC7G — Discrete Semiconductors

R6524KNXC7G ROHM N-Ch MOSFET, 650V 24A TO-220FM

MPNR6524KNXC7G
End of Life

ROHM Semiconductor R6524KNXC7G N-Channel MOSFET, 650 V, 24 A, 185 mOhm, TO-220-3 Full Pack, Through Hole, Tube.

$5.37Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockIn Stock (21)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

R6524KNXC7G Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Ta)
Power dissipation74W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 750µA
Rds on (Max) @ id, vgs185mOhm @ 11.3A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1850 pF @ 25 V

Product details

650 V, 24 A N-channel — the switching load it handles

The R6524KNXC7G: These two numbers define the primary switching load it can handle in a power supply, motor drive, or inverter stage — the 650 V breakdown gives margin on a 400 VDC bus, and the 24 A continuous rating covers the RMS current in a typical 1–2 kW offline converter.

Conduction loss and gate drive budget

Maximum on-resistance is 185 mOhm at 11.3 A drain current with a 10 V gate drive. At 24 A the Rds(on) will be higher — the 185 mOhm figure is the ceiling at the test condition, and the actual conduction loss at full load is Id² × Rds(on) × duty cycle. The 10 V drive voltage is the recommended rail for minimum Rds(on); the gate threshold is 5 V max at 750 µA, so a standard 12 V gate drive from a bootstrap or isolated supply comfortably saturates the channel. Total gate charge is 45 nC at 10 V. For a 100 kHz hard-switched converter, the average gate-drive current is Qg × fsw = 4.5 mA — a small signal driver handles it. The input capacitance is 1850 pF at 25 V Vds, which sets the switching speed limit: the driver must source and sink enough peak current to charge and discharge this capacitance within the dead time. A 1 A gate driver charges 1850 pF from 0 to 10 V in roughly 18 ns, well within a typical 100–200 ns dead band.

TO-220FM — the isolated package that bolts directly

The TO-220-3 Full Pack (also called TO-220FM) is a fully moulded through-hole package with the metal tab encapsulated — no exposed drain pad. This means the device can be bolted directly to a grounded heatsink or chassis without an insulating washer or pad, saving assembly time and reducing thermal resistance compared to a standard TO-220 with a mica insulator.

The part ships in Tube packaging.