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ROHM Semiconductor FMY1AT148 — Memory (DRAM / SRAM / Flash / EEPROM)

FMY1AT148 NPN/PNP transistor, 50V, 150mA, 180/140MHz

MPNFMY1AT148
End of Life

ROHM FMY1AT148 dual transistor, NPN/PNP emitter-coupled pair, 50V Vce, 150mA Ic, 300mW, 180/140MHz transition frequency, SC-74A/SOT-753 surface mount.

$0.51Ref. price · indicative, final on quote
PackagingSC-74A, SOT-753
StockContact for availability
MOQ1 pcs
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Specifications

FMY1AT148 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN, PNP (Emitter Coupled)
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 6V
Power - max300mW
Frequency180MHz, 140MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-74A, SOT-753
Vce saturation (Max) @ ib, ic400mV @ 5mA, 50mA, 500mV @ 5mA, 50mA

Product details

50V dual NPN/PNP in a SOT-753 — a compact complementary pair

The ROHM FMY1AT148 packs an NPN and a PNP transistor in a single SOT-753 (SC-74A) package, emitter-coupled for a compact push-pull or complementary output stage. Each side is rated for 50V collector-emitter breakdown and 150mA continuous collector current, placing this firmly in the small-signal class — think level shifters, pre-driver buffers, audio line drivers, and general-purpose logic translation on 12V or 24V rails where you need both polarities without taking up two separate transistor footprints.

180/140 MHz fT — fast enough for moderate-speed switching and audio

The transition frequency is 180MHz for the NPN side and 140MHz for the PNP side. That puts it well above audio-band requirements and into the range of moderate-speed switching — good for gate-drive buffers in low-frequency converters, relay coil drivers, or as a pre-driver for a larger complementary pair. Not a part for RF front-ends or high-speed digital line drivers, but for the typical 100 kHz to a few MHz switching it has plenty of gain-bandwidth margin.

Saturation voltage and gain — what the 400/500 mV and hFE tell you

Vce(sat) is specified at 400 mV max for the NPN (at 5 mA base, 50 mA collector) and 500 mV max for the PNP under the same drive conditions. That's typical for a small-signal transistor — the saturation voltage won't limit you at signal-level currents, but if you're driving the full 150 mA near the maximum rating, the 500 mV drop plus the 300 mW total package dissipation limit will be the binding constraint. DC current gain (hFE) is a minimum of 120 at 1 mA, 6V, which gives consistent beta across the active region for analog bias design.

Frequently asked questions

Where to buy FMY1AT148 online?

Submit an RFQ on this page for current pricing and availability — quotes are confirmed at order time against the live market.

What is the FMY1AT148 equivalent or replacement?

The closest functional peer is the IMZ1AT108, which has the same 50V, 150mA, 300mW ratings and 180MHz fT in a surface-mount package. The UMZ1NTR and EMZ1T2R are also electrically similar but rated at 150mW max power. Pinout and package dimensions should be verified against the specific PCB footprint before substitution.