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ROHM Semiconductor BR93G56F-3GTE2 — Memory (DRAM / SRAM / Flash / EEPROM)

ROHM BR93G56F-3GTE2 EEPROM, 2Kbit, 3MHz, Microwire, 8-SOIC

MPNBR93G56F-3GTE2
End of Life

ROHM BR93G56F-3GTE2 EEPROM, 2Kbit, 256 x 8 / 128 x 16 organization, Microwire interface, 3 MHz clock, 1.7V-5.5V supply, 8-SOP package, -40°C to 85°C, RoHS3 compliant.

$0.46Ref. price · indicative, final on quote
Packaging8-SOIC (0.173", 4.40mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BR93G56F-3GTE2 specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Voltage1.7V ~ 5.5V
Frequency3 MHz
Memory interfaceMicrowire
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyEEPROM
Memory size2Kbit
Memory formatEEPROM
Case8-SOIC (0.173\", 4.40mm Width)
Memory organization256 x 8, 128 x 16
Write cycle time - word, page5ms

Product details

The ROHM BR93G56F-3GTE2 is a 2Kbit serial EEPROM using the Microwire bus interface, organized as 256 x 8 or 128 x 16 bits. Packaged in an 8-SOP body, it is surface-mount and intended for non-volatile storage of configuration data, calibration constants, serial numbers, or small lookup tables in industrial control, sensor modules, telecom gear, and battery-powered instruments where the wide supply range and low pin-count bus are advantages.

Supply voltage and interface — the two specs that decide fit

The 1.7V to 5.5V supply range covers single-cell Li-ion down to near-depletion and 5V legacy rails, so no level translator is needed when the host MCU runs at 3.3V or 5V. The Microwire interface uses three signals (SK, DI, DO) plus a chip-select — not I2C or SPI — so verify the host controller has a dedicated Microwire peripheral or can bit-bang the timing. At 3 MHz the bus can read a full 2Kbit in under 1 ms, which is fine for most parameter-storage tasks.

Active lifecycle and compliance status

It is fully RoHS3 compliant.

The data retention and endurance are specified per the EEPROM technology; the 5ms write cycle time is consistent across the full temperature range.

Frequently asked questions

What is the write cycle time for BR93G56F-3GTE2?

The write cycle time is 5ms per word or page. This is the time from the end of a write instruction until the device is ready for the next command.

Is BR93G56F-3GTE2 RoHS compliant?

Yes, it is ROHS3 compliant per ROHM's listing.

Is there an equivalent or replacement for BR93G56F-3GTE2?

A functional peer is the BR93G46FVM-3AGTTR, which is a 1Kbit (half-density) EEPROM in the same Microwire family with identical supply range, clock speed, and write cycle time.