Active production, low-side GaN driver for high-frequency switching
The RAA2261104GNP#MA0: With two independent, non-inverting channels, each rated for 2A peak source and 1.2A peak sink current, this driver handles the fast turn-on and turn-off demands of GaN FETs in half-bridge or dual low-side configurations. The 30ns typical rise and 31ns fall times keep switching losses low at high PWM frequencies.
Supply range, temperature grade, and package fit
The driver operates from a 6.5V to 18V supply rail, covering the bias range for most GaN gate drivers and standard 12V auxiliary buses. The -40°C to 125°C operating temperature range qualifies it for industrial and automotive under-hood environments — the junction can see 125°C without derating the output current. Housed in a 16-VQFN Exposed Pad package, the 4x4 mm footprint suits space-constrained power stages. The exposed pad must be soldered to a thermal land on the PCB to pull heat from the driver die — a standard via-array under the pad keeps RthJA in check. ROHS3 compliant, no lead or halogen exemptions.