Nexperia TrenchMOS series, PHB20N06T,118, N-channel MOSFET, 55 V Vdss, 20.3 A Id, 75 mOhm Rds(on) at 10 V, 11 nC Qg, D2PAK (TO-263AB), -55°C to 175°C TJ.
| Parameter | Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20.3A (Tc) |
| Power dissipation | 62W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 75mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 11 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 483 pF @ 25 V |
The Nexperia PHB20N06T,118 is a TrenchMOS N-channel MOSFET rated 55 V drain-source and 20.3 A continuous drain current at a 25°C case temperature, housed in a surface-mount D2PAK (TO-263AB) package.
The 75 mOhm Rds(on) at Vgs=10 V sets the conduction loss floor.
It can serve as a replacement for any N-channel MOSFET in a D2PAK package with equal or lower voltage and current ratings, provided the gate drive voltage is 10 V and the switching frequency keeps the gate charge losses within the thermal budget. The 55 V Vdss and 20.3 A Id set the upper bound; the replacement must not exceed these limits.