NXP MC33GD3100A3EK single-channel IGBT/N-Channel MOSFET gate driver, 15A peak source/sink, 3.3V supply, half-bridge configuration, -40°C to +125°C, 32-BSSOP surface-mount package, ROHS3 compliant, active production.
| Parameter | Value |
|---|---|
| Gate type | IGBT, N-Channel MOSFET |
| Channel type | Single |
| Mounting | Surface Mount |
| Supply voltage | 3.3V |
| Current - peak output (Source, sink) | 15A, 15A |
| Operating temperature | -40°C ~ 125°C (TA) |
| Package | Tube |
| Case | 32-BSSOP (0.295\", 7.50mm Width) |
| Number of drivers | 1 |
| Driven configuration | Half-Bridge |
The NXP MC33GD3100A3EK is a single-channel gate driver for IGBT and N-Channel MOSFET power switches, configured as a half-bridge driver. It delivers 15 A peak source and 15 A peak sink current.
The part is ROHS3 compliant, covering the latest EU restriction exemptions.
The part is ROHS3 compliant. Standard NXP documentation includes the datasheet, application notes, and a PCN notification service for any manufacturing changes. REACH and conflict minerals declarations are typically available from NXP's compliance portal.
It drives IGBT and N-Channel MOSFET gates in a half-bridge configuration. The single-channel output can serve as the high-side or low-side driver in one inverter leg, or as a standalone switch driver.