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NXP Semiconductors BYC10D-600,127

BYC10D-600,127 Diode, Fast Recovery 500V 10A TO-220AC

MPNBYC10D-600,127
End of Life

WeEn Semiconductors BYC10D-600,127, standard fast recovery diode, 500 V reverse, 10 A average rectified, 18 ns trr, TO-220AC through-hole package.

$0.41Ref. price · indicative, final on quote
NXP Semiconductors BYC10D-600,127 datasheet (PDF)
PackagingTO-220-2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYC10D-600,127 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)500 V
Voltage - forward (Vf) (Max) @ if2.5 V @ 10 A
Current - reverse leakage @ vr200 µA @ 600 V
Current - average rectified10A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseTO-220-2
Reverse recovery time18 ns

Product details

Fast recovery diode in a TO-220AC through-hole package

The BYC10D-600,127 from WeEn Semiconductors is a standard fast recovery diode rated for 500 V DC reverse voltage and 10 A average rectified current, housed in a TO-220AC through-hole package.

The 18 ns trr is the time to sweep stored charge from the junction when the diode transitions from forward conduction to reverse blocking. In a 50–100 kHz PFC boost or flyback converter, that recovery charge (Qrr) is the dominant contributor to turn-off loss in the diode and switching noise in the loop. At 10 A forward current, the maximum forward voltage is 2.5 V, so conduction loss at full load is 25 W — the TO-220AC package with a proper heatsink can handle that thermal budget in a forced-air or well-ventilated enclosure.

Frequently asked questions

What is the reverse recovery time of BYC10D-600,127?

The BYC10D-600,127 has a reverse recovery time (trr) of 18 ns, confirming it as a fast recovery diode suitable for high-frequency switching applications.