NXP Semiconductors BFU790F,115 — Memory (DRAM / SRAM / Flash / EEPROM)
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NXP Semiconductors / Memory (DRAM / SRAM / Flash / EEPROM)

Nexperia BFU790F,115 RF NPN Transistor, 25 GHz, 0.4 dB NF

MPN BFU790F,115
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Nexperia BFU790F,115 RF NPN transistor, 25 GHz transition frequency, 0.4 dB noise figure at 1.5-2.4 GHz, 2.8 V Vceo max, 100 mA Ic max, 234 mW max power, SOT-343F package, surface mount.

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[SPEC] Essential Parameters Snapshot Full Specifications (11)
Package / Case SOT-343F

Full Technical Specifications

11 Parameters
BFU790F,115 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown2.8V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce235 @ 10mA, 2V
Power - max234mW
Frequency - transition25GHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-343F
Noise figure (dB typ @ f)0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
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Technical Details & Description

Package and pinout — SOT-343F / 4-DFP

SOT-343F plastic surface-mount package, also referred to as 4-DFP. 4-pin footprint with collector on backside pad.

25 GHz transition frequency (fT) provides useful gain into Ku and K bands. 0.4 dB noise figure at 1.5-2.4 GHz drives LNA performance. 235 minimum hFE at 10 mA, 2 V. 100 mA maximum collector current.

Frequently asked questions

What are the thermal and power specs of BFU790F for a 25 GHz design?

Maximum power dissipation is 234 mW. The operating junction temperature is rated to 150 °C. The 25 GHz transition frequency is the headline RF spec; the part is typically used in LNA or driver stages where the collector current is set well below 100 mA to stay within the power budget.

What is the recommended replacement for BFU790F,115?

There is no recommended replacement because the BFU790F,115 is an active, current-production part. No successor or alternate has been issued by Nexperia.

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