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NXP Semiconductors BFU760F,115 — Memory (DRAM / SRAM / Flash / EEPROM)

BFU760F,115 NPN RF Transistor, 45 GHz, 0.4 dB Noise Figure

MPNBFU760F,115
End of Life

NXP BFU760F,115 NPN RF transistor, 45 GHz transition frequency, 0.4 dB noise figure, 2.8 V Vceo, 70 mA Ic, 220 mW, SOT-343F package.

$0.55Ref. price · indicative, final on quote
PackagingSOT-343F
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BFU760F,115 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown2.8V
Current - collector (Ic)70mA
DC current gain (hFE) (Min) @ ic, vce155 @ 10mA, 2V
Power - max220mW
Frequency - transition45GHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-343F
Noise figure (dB typ @ f)0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz

Product details

Noise figure is 0.4 dB at 1.5 GHz and 0.5 dB at 2.4 GHz.

Package and thermal — SOT-343F constraints

SOT-343F (4-DFP) package. Maximum power dissipation is 220 mW.

Active lifecycle status, RoHS3 compliant. Available through independent distribution; pricing and stock confirmed at quote time.

Frequently asked questions

What is the power dissipation of BFU760F,115?

The maximum power dissipation is 220 mW, limited by the SOT-343F package and junction temperature rating of 150°C.

What is the noise figure of BFU760F115?

The noise figure is 0.4 dB typical at 1.5 GHz and 0.5 dB typical at 2.4 GHz.