DC gain and bias point
Minimum DC current gain (hFE) is 205 at a collector current of 2 mA and collector-emitter voltage of 2 V. Collector-emitter breakdown is 2.8 V.
Product status is Active. RoHS3 compliant. No NRND or EOL notice.
NXP BFU730F,115 NPN RF Transistor, 55 GHz, SOT-343F
MPNBFU730F,115
End of Life
NXP BFU730F,115 NPN RF transistor, 2.8 V Vceo, 55 GHz fT, 30 mA Ic, SOT-343F package, 150°C junction temperature.
$0.66Ref. price · indicative, final on quote
PackagingSOT-343F
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | NPN |
| Voltage - collector emitter breakdown | 2.8V |
| Current - collector (Ic) | 30mA |
| DC current gain (hFE) (Min) @ ic, vce | 205 @ 2mA, 2V |
| Power - max | 197mW |
| Frequency | 55GHz |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | SOT-343F |
| Noise figure (dB typ @ f) | 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz |
Product details
Frequently asked questions
What is the operating frequency and noise figure of BFU730F,115?
The transition frequency is 55 GHz. Typical noise figure is 0.8 dB at 5.8 GHz and 1.3 dB at 12 GHz.
Is BFU730F,115 RoHS compliant?
Yes, it is RoHS3 compliant.