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NXP USA Inc. PDTA124EK,115 — Discrete Semiconductors

NXP USA Inc. PDTA124EK,115

MPNPDTA124EK,115
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTA124EK,115 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff1µA
DC current gain (hFE) (Min) @ ic, vce60 @ 5mA, 5V
Power - max250 mW
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)22 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic150mV @ 500µA, 10mA