SYNCBURST SRAM for high-throughput data buffers
The Micron MT58L64L18PT-7.5 is a 1 Mbit synchronous burst SRAM organized 64K x 18, built on the SYNCBURST architecture for pipelined read/write operations at clock rates up to 133 MHz. The 4.2 ns access time sets the window for the memory controller to latch data on the first read access; subsequent burst cycles follow the clock at the full 133 MHz rate. This part is designed for high-bandwidth cache, line buffers, and networking ASIC glue where deterministic latency and no bus-turnaround dead cycles matter.
Supply and temperature: indoor equipment only
Operating from a 3.135 V supply and rated 0°C to 70°C, this SRAM is for commercial-temperature, indoor environments.
Package and footprint: 100 TQFP
Housed in a 100-lead TQFP for surface-mount assembly, the part is a thin quad flat pack.
