The MT47H128M8SH-25E:M is a 1 Gbit DDR2 SDRAM organized as 128M x 8 bits, running at a 400 MHz clock frequency with a parallel interface. The 400 ps access time and 15 ns write cycle time (word, page) define the timing budget for the memory controller. This is a volatile DRAM — data is retained only while power is applied — and is used as main system memory in networking equipment, embedded computing, and telecom infrastructure where DDR2 bandwidth is sufficient.
Package, footprint, and temperature grade
Housed in a 60-ball TFBGA (thin fine-pitch ball grid array) measuring 8x10 mm, the package is surface-mount and requires a 4+ layer PCB for fan-out of the 60 balls. The 0.8 mm ball pitch is standard for this density; the BGA footprint should follow Micron's layout recommendation to avoid signal-integrity issues at 400 MHz.
For new designs, confirm that the 128M x 8 organization and 60-FBGA footprint match your BOM; if a wider data bus is needed, the 256M x 8 variant (MT47H256M8EB-25E:C) doubles the density in the same package style.