Micron MT55L128L32F1T-10 ZBT SRAM, 4Mbit (128K x 32), 7.5 ns access time, 100 MHz clock, 3.135V–3.465V supply, 100-TQFP, 0°C to 70°C.
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | ZBT® |
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3.135V ~ 3.465V |
| Clock frequency | 100 MHz |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Bulk |
| Technology | SRAM - ZBT |
| Access time | 7.5 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 100-LQFP |
| Memory organization | 128K x 32 |
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The Micron MT55L128L32F1T-10 is a 4Mbit Zero Bus Turnaround (ZBT) synchronous SRAM organized as 128K x 32 bits. Its 7.5 ns access time and 100 MHz clock rate eliminate the dead cycles between read and write operations that plague standard synchronous SRAMs, making it a natural fit for network packet buffers, DSP filter coefficient storage, and any pipeline that demands back-to-back throughput without bus-turnaround penalty.
No, the MT55L128L32F1T-10 is explicitly RoHS non-compliant. This restricts its use in EU-market designs or any project with RoHS requirements.
Yes, the supply voltage range of 3.135V to 3.465V maps directly onto a 3.3V rail, so the SRAM interfaces with 3.3V logic families without level shifters.
The datasheet for the MT55L128L32F1T-10 is available from Micron. It covers the full timing parameters, AC/DC characteristics, and package drawing for the 100-TQFP.
The pinout is defined in the Micron datasheet for the 100-TQFP package. The 128K x 32 organization uses a parallel address/data bus with ZBT control signals.