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Micron Technology MT58L256L18P1T-7.5 — Microcontrollers & Processors (MCU / MPU / DSP)
Micron Technology

Micron MT58L256L18P1T-7.5 SYNCBURST SRAM, 4Mbit, 4ns, 133MHz

MPNMT58L256L18P1T-7.5
End of Life

Micron SYNCBURST™ SRAM, MT58L256L18P1T-7.5, 4Mbit (256K x 18), 4 ns access time, 133 MHz clock, Parallel interface, 3.135V–3.6V supply, 0°C to 70°C, 100-TQFP (14x20.1 mm).

$5.93Ref. price · indicative, final on quote
MT58L256L18P1T-7.5 datasheet
Packaging100-LQFP
StockContact for availability
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Specifications

MT58L256L18P1T-7.5 Technical Specifications
ParameterValue
SeriesSYNCBURST™
Memory typeVolatile
Mounting typeSurface Mount
Voltage3.135V ~ 3.6V
Frequency133 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM
Access time4 ns
Memory size4Mbit
Memory formatSRAM
Case100-LQFP
Memory organization256K x 18

Product details

SYNCBURST SRAM — 4 ns access time at 133 MHz

The Micron MT58L256L18P1T-7.5 is a 4 Mbit synchronous SRAM from the SYNCBURST family, organized as 256 K x 18 bits. It delivers a 4 ns access time and operates at a 133 MHz clock frequency over a parallel interface. This part is built for high-throughput data buffers in networking equipment, telecom line cards, and test instrumentation where deterministic read-write latency matters more than density. The supply range spans 3.135 V to 3.6 V, and the device is specified for the commercial temperature range of 0°C to 70°C.

4 ns access time — what it means for the bus

The 4 ns access time at 133 MHz allows data delivery within one clock cycle. The 256 K x 18 organization supports parity or ECC applications.

Sourcing and availability

Frequently asked questions

What is the datasheet for MT58L256L18P1T-7.5?

The datasheet covers the SYNCBURST family timing parameters, including the 4 ns access time and 133 MHz clock operation. It is available from the manufacturer's documentation portal.

Can MT58L256L18P1T-7.5 replace a slower SRAM?

Yes, because it has a 4 ns access time and 133 MHz clock, it can replace a slower synchronous SRAM in the same package and voltage range, provided the controller can be configured for the faster timing. The 3.135 V to 3.6 V supply range is standard for 3.3 V logic families.

What are alternatives to MT58L256L18P1T-7.5?

The peer parts in evidence are all NAND Flash or SPI NOR Flash devices (MT29F4G08, MT29F1G08, MT25QU256), which are non-volatile and have different interface and timing characteristics. They are not functional equivalents for a synchronous SRAM. A true alternative would be another 3.3 V, 133 MHz, 256 K x 18 synchronous SRAM in a 100-TQFP package from a different supplier.