Skip to main content
Micron Technology MT58L128V32P1T-10 — Memory (DRAM / SRAM / Flash / EEPROM)

MT58L128V32P1T-10 Micron SYNCBURST SRAM, 5 ns Access

MPNMT58L128V32P1T-10
End of Life

Micron SYNCBURST™ MT58L128V32P1T-10, 4Mbit synchronous SRAM, 5 ns access time, 100 MHz clock, 128K x 32 organization, parallel interface, 3.135V~3.6V supply, 0°C~70°C, 100-TQFP (14x20.1mm).

$7.52Ref. price · indicative, final on quote
Packaging100-LQFP
RoHSRoHS non-compliant
SeriesSYNCBURST™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

MT58L128V32P1T-10 specifications
ParameterValue
SeriesSYNCBURST™
Memory typeVolatile
MountingSurface Mount
Voltage3.135V ~ 3.6V
Frequency100 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM
Access time5 ns
Memory size4Mbit
Memory formatSRAM
Case100-LQFP
Memory organization128K x 32

Product details

Synchronous burst SRAM for high-throughput cache and buffer designs

The Micron MT58L128V32P1T-10 is a 4 Mbit synchronous SRAM from the SYNCBURST™ family, organized as 128K x 32 bits with a parallel interface. Its 5 ns access time and 100 MHz clock rate target applications that need sustained read/write bandwidth without wait states — think network switch buffers, telecom line-card packet memory, or processor / cache where the bus runs at speed and every cycle counts. The 32-bit wide data bus matches directly to a 32-bit processor or ASIC memory controller, saving the board space and routing complexity of interleaving narrower parts.

The 5 ns access time and 100 MHz clock allow back-to-back reads within the synchronous pipeline.

100-lead TQFP (14 x 20.1 mm) for surface-mount assembly.

Frequently asked questions

What is the access time of MT58L128V32P1T-10?

The MT58L128V32P1T-10 has a 5 ns access time, with a 100 MHz clock frequency for synchronous burst operation.

What is MT58L128V32P1T-10's listed series?

The series is SYNCBURST™, Micron's family of synchronous burst SRAMs designed for high-bandwidth cache and buffer applications.