Micron MT57V512H36EF-5, 18Mbit Synchronous SRAM, 512K x 36 organization, 200 MHz clock, 2.4 ns access time, 2.4V–2.6V supply, 165-FBGA, 0°C to 70°C.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Voltage | 2.4V ~ 2.6V |
| Frequency | 200 MHz |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Bulk |
| Technology | SRAM - Synchronous |
| Access time | 2.4 ns |
| Memory size | 18Mbit |
| Memory format | SRAM |
| Case | 165-TBGA |
| Memory organization | 512K x 36 |
It runs at a 200 MHz clock frequency with a 2.4 ns access time, making it a fit for high-speed cache, network packet buffers, and DSP scratchpad memory where deterministic read-write latency matters. The 36-bit word width maps naturally to systems using parity or ECC protection without packing overhead.
The MT57V512H36EF-5 is listed as an active, current-production part. No last-time-buy or phase-out notices are in effect.
The MT57V512H36EF-5 is rated for 0°C to 70°C (TA) — commercial temperature grade only.
The MT57V512H36EF-5 is supplied in a 165-ball FBGA with a 13x15 mm body (Supplier Device Package 165-FBGA).
The MT57V512H36EF-5 is an active part with no official replacement. The listed peers (MT29F4G08, MT29F1G08, MT25QU256) are NAND Flash and serial NOR Flash — different memory technologies and interfaces, not functional equivalents for a synchronous SRAM design.