Infineon Technologies IPP0 Discrete Semiconductors Series

5 variants · Infineon TechnologiesAll Discrete Semiconductors →

About the Infineon Technologies IPP0 Discrete Semiconductors Series

The Infineon Technologies IPP0 Discrete Semiconductors Series series groups 5 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of TO-220-3, drive voltage (Max rds on, min rds on) of 6V, 10V and FET type of N-Channel. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and gate charge (Qg) (Max) @ vgs, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. All listed Infineon Technologies IPP0 Discrete Semiconductors Series part numbers are active and orderable.

Select a variant by

Current - continuous drain (Id) @ 25°C: 27A (Ta), 184A (Tc) · 33A (Ta), 185A (Tc) · 35A (Ta), 196A (Tc) · 36A (Ta), 194A (Tc) · 39A (Ta), 198A (Tc)
Drain to source voltage: 60 V · 80 V · 100 V
Gate charge (Qg) (Max) @ vgs: 154 nC @ 10 V · 162 nC @ 10 V · 233 nC @ 10 V · 255 nC @ 10 V · 305 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds: 7300 pF @ 30 V · 7300 pF @ 50 V · 10500 pF @ 30 V · 12000 pF @ 40 V · 13800 pF @ 30 V
Power dissipation: 3.8W (Ta), 188W (Tc) · 3.8W (Ta), 250W (Tc) · 3.8W (Ta), 300W (Tc)
Rds on (Max) @ id, vgs: 1.4mOhm @ 100A, 10V · 1.6mOhm @ 100A, 10V · 1.9mOhm @ 100A, 10V · 2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ id: 3.3V @ 129µA · 3.3V @ 186µA · 3.3V @ 246µA · 3.8V @ 169µA · 3.8V @ 267µA

Shared specifications

Case: TO-220-3
Drive voltage (Max rds on, min rds on): 6V, 10V
FET type: N-Channel
Mounting: Through Hole
Operating temperature: -55°C ~ 175°C (TJ)
Package: Tube
Technology: MOSFET (Metal Oxide)
Vgs: ±20V

Variant comparison

Parameter	IPP014N06NF2SAKMA2	IPP016N06NF2SAKMA1	IPP016N08NF2SAKMA1	IPP019N06NF2SAKMA1	IPP026N10NF2SAKMA1
Current - continuous drain (Id) @ 25°C	39A (Ta), 198A (Tc)	36A (Ta), 194A (Tc)	35A (Ta), 196A (Tc)	33A (Ta), 185A (Tc)	27A (Ta), 184A (Tc)
Drain to source voltage	60 V	60 V	80 V	60 V	100 V
Gate charge (Qg) (Max) @ vgs	305 nC @ 10 V	233 nC @ 10 V	255 nC @ 10 V	162 nC @ 10 V	154 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	13800 pF @ 30 V	10500 pF @ 30 V	12000 pF @ 40 V	7300 pF @ 30 V	7300 pF @ 50 V
Power dissipation	3.8W (Ta), 300W (Tc)	3.8W (Ta), 250W (Tc)	3.8W (Ta), 300W (Tc)	3.8W (Ta), 188W (Tc)	3.8W (Ta), 250W (Tc)
Rds on (Max) @ id, vgs	1.4mOhm @ 100A, 10V	1.6mOhm @ 100A, 10V	1.6mOhm @ 100A, 10V	1.9mOhm @ 100A, 10V	2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ id	3.3V @ 246µA	3.3V @ 186µA	3.8V @ 267µA	3.3V @ 129µA	3.8V @ 169µA

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