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Infineon Technologies IPP016N08NF2SAKMA1 — Logic ICs

Infineon IPP016N08NF2SAKMA1 N-Channel MOSFET, 80V, 1.6mΩ

MPNIPP016N08NF2SAKMA1
End of Life

Infineon StrongIRFET™ 2 N-Channel MOSFET, 80 V Vdss, 1.6 mOhm Rds(on) max at 10 V, 196 A continuous drain at Tc, TO-220-3 through-hole package, -55 to 175 °C junction temperature.

$4.11Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
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Specifications

IPP016N08NF2SAKMA1 Technical Specifications
ParameterValue
SeriesStrongIRFET™ 2
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C35A (Ta), 196A (Tc)
Power dissipation3.8W (Ta), 300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.8V @ 267µA
Rds on (Max) @ id, vgs1.6mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs255 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds12000 pF @ 40 V

Product details

80 V, 1.6 mΩ — the conduction-loss story

The Infineon IPP016N08NF2SAKMA1 is an N-channel MOSFET from the StrongIRFET™ 2 family, built on a trench technology rated for 40 to 100 V. Its headline figure is a maximum Rds(on) of 1.6 mΩ at a 10 V gate drive with 100 A of drain current — a number that tells you the conduction loss at full load will be under 16 W before thermal derating. The 80 V drain-to-source rating places it in the sweet spot for 48 V telecom rectifiers, 24 V automotive systems, and battery-management contactor circuits where the rail sees transients above 60 V.

Current rating — package versus die

Two continuous-drain figures are listed: 35 A at 25 °C when the case is at ambient (Ta), and 196 A at 25 °C when the case is held at 25 °C (Tc). The 35 A Ta number is what you size the PCB copper and airflow for in a real enclosure; the 196 A Tc number tells you what the die can pass if you bolt the TO-220-3 tab to a heatsink with forced air or liquid cooling. The package's rated power dissipation is 300 W at Tc and 3.8 W at Ta — a 78:1 ratio that makes the thermal interface the deciding factor in any high-current design.

Gate drive and switching budget

The gate charge is 255 nC at a 10 V gate drive, which is substantial — expect the gate driver to supply several amperes peak if you need fast turn-on for hard-switching at 50 kHz or above. The input capacitance is 12000 pF at 40 V drain bias, and the threshold voltage maximum is 3.8 V at 267 µA. The drive voltage range for achieving the minimum and maximum Rds(on) is 6 V to 10 V, meaning a 5 V logic-level gate signal will not fully enhance the channel; the part is designed for a 10 V gate rail, or at least 6 V, to hit the rated on-resistance.

Temperature range and deployment context

The junction temperature range is -55 to 175 °C, which covers military and automotive under-hood environments. The 175 °C max junction allows the die to run hot in a sealed enclosure or near an engine block, but the 300 W Tc dissipation rating assumes the case stays at 25 °C — in practice, derate the power linearly above 25 °C case temperature. The ±20 V maximum gate-to-source rating is standard for this voltage class.

Package and mounting

The IPP016N08NF2SAKMA1 comes in a PG-TO220-3 through-hole package — the standard three-lead TO-220 with a metal tab for screw-mount or clip heatsinking. Through-hole mounting is preferred for high-power designs where the leads carry the full drain current and the tab needs a thermal path to the chassis or heatsink.

Frequently asked questions

What is the maximum Rds(on) of the IPP016N08NF2SAKMA1 at 10 V?

At a 6 V gate drive the Rds(on) will be higher — the part is optimised for a 10 V gate rail.

What are the direct equivalents of the IPP016N08NF2SAKMA1?

For dual-sourcing, consult the StrongIRFET™ 2 family datasheet for devices with similar Rds(on), Vdss, and package ratings.