IPP019N06NF2SAKMA1

Infineon Technologies · StrongIRFET™ Series

Infineon StrongIRFET™ IPP019N06NF2SAKMA1, N-Channel MOSFET, 60 V Vdss, 1.9 mOhm Rds(on) @ 100 A, 162 nC gate charge, TO-220-3, -55°C to 175°C.

Infineon Technologies IPP019N06NF2SAKMA1
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Technical specifications

IPP019N06NF2SAKMA1 specifications
Parameter / AttributeSpecification / Value
SeriesStrongIRFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C33A (Ta), 185A (Tc)
Power dissipation3.8W (Ta), 188W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.3V @ 129µA
Rds on (Max) @ id, vgs1.9mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs162 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7300 pF @ 30 V

Technical details

A 1.9 mOhm switch for 60 V rails — sizing the loss budget

185 A continuous — what the package and temperature grade allow

The continuous drain current is rated 185 A when the case temperature is held at 25°C, and 33 A when the ambient air is 25°C with no heatsink. That gap is the thermal reality: the TO-220-3 package (PG-TO220-3-U05) can pass the current if the junction stays under 175°C, but the 3.8 W ambient dissipation limit means you need a heatsink for any load above a few amps.

Gate drive and input capacitance — what the 6 V / 10 V spec means

The drive voltage range is specified as 6 V minimum for the lowest Rds(on) and 10 V for the rated maximum performance. At 10 V the 1.9 mOhm figure is guaranteed; if your gate drive rail is 5 V or 3.3 V, the on-resistance will be higher — check the typical curves in the datasheet. The 7300 pF input capacitance at 30 V drain bias is moderate for a 60 V device of this current class; it loads the gate driver with about 162 nC per switching event, so a driver capable of sourcing at least 2 A peak is a safe starting point for keeping switching times under 100 ns.

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