IPP014N06NF2SAKMA2

Infineon Technologies · StrongIRFET™ Series

Infineon StrongIRFET™ series, IPP014N06NF2SAKMA2, N-Channel MOSFET, 60 V Vdss, 1.4 mOhm Rds(on) @ 100 A, 10 V, 198 A continuous drain (Tc), PG-TO220-3-U05 through-hole package, -55°C to 175°C junction temperature.

Infineon Technologies IPP014N06NF2SAKMA2
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Technical specifications

IPP014N06NF2SAKMA2 specifications
Parameter / AttributeSpecification / Value
SeriesStrongIRFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C39A (Ta), 198A (Tc)
Power dissipation3.8W (Ta), 300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.3V @ 246µA
Rds on (Max) @ id, vgs1.4mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs305 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13800 pF @ 30 V

Technical details

IPP014N06NF2SAKMA2
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