1.4 mOhm at 10 V — the conduction-loss anchor
The Infineon IPP014N06NF2SAKMA2 is a 60 V N-channel MOSFET from the StrongIRFET™ family, built on a trench technology rated for 40 to 100 V applications. The 305 nC typical gate charge at 10 V means the gate driver needs to source and sink substantial current for fast switching edges; pair it with a driver rated for at least 2 A peak to keep transition times in the tens of nanoseconds. The 13800 pF input capacitance at 30 V Vds reinforces that the driver sees a heavy capacitive load.
198 A continuous, 300 W dissipation — thermal design rules
The 198 A continuous drain current at case temperature (Tc) and 300 W maximum power dissipation at Tc assume an infinite heatsink — in practice, the junction-to-case thermal path through the TO-220 tab determines the real limit. The 39 A at 25°C ambient (Ta) with no heatsink is the bare-device ceiling; a forced-air or liquid-cooled heatsink is needed to approach the 198 A figure.
PG-TO220-3-U05 — mounting and footprint
The through-hole PG-TO220-3-U05 package has the standard three-lead TO-220 footprint with a metal tab for heatsink attachment. The U05 suffix indicates a specific lead form for automated insertion equipment. The tab is electrically connected to the drain — an insulating pad or thermal compound is required when mounting to a grounded heatsink. The 3.8 W (Ta) and 300 W (Tc) dissipation ratings bracket the thermal design space: the lower figure is the bare-board limit, the upper figure is what a well-ventilated heatsink assembly can achieve.
Active lifecycle, ROHS3, and sourcing posture
ROHS3 compliant covers the full restricted-substance list including the four phthalates, clearing it for EU-market and most OEM environmental requirements.