IPP016N06NF2SAKMA1

Infineon Technologies · StrongIRFET™ Series

Infineon StrongIRFET™ IPP016N06NF2SAKMA1, N-Channel MOSFET, 60 V Vdss, 1.6 mOhm Rds(on) @ 100 A, 10 V, 233 nC gate charge, TO-220-3, -55 to 175 °C.

Infineon Technologies IPP016N06NF2SAKMA1
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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPP016N06NF2SAKMA1 specifications
Parameter / AttributeSpecification / Value
SeriesStrongIRFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C36A (Ta), 194A (Tc)
Power dissipation3.8W (Ta), 250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.3V @ 186µA
Rds on (Max) @ id, vgs1.6mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs233 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10500 pF @ 30 V

Technical details

What this StrongIRFET™ MOSFET is rated for

The gate charge of 233 nC at 10 V tells you the gate driver must be able to source that charge quickly to hit the target switching speed; expect to pair it with a driver capable of several amps peak current if you are switching above 20 kHz.

Current capability and thermal limits

The maximum power dissipation figures are 3.8 W at ambient and 250 W at the case, which is the spread between a bare TO-220 in free air and one bolted to a large heatsink. The operating junction temperature range of -55 to 175 °C covers automotive under-hood and industrial motor-drive environments where ambient heat is high.

Package and mounting — TO-220-3

Through-hole TO-220-3 package (Infineon code PG-TO220-3-U05) with a standard tab that bolts to a heatsink. The 1.6 mOhm Rds(on) means the tab carries significant current — ensure the PCB trace from the drain pin is wide enough for the load, or route the drain current through the tab to the heatsink ground plane.

The ROHS3 compliance covers current regulatory requirements for solder alloys and finishes.

IPP016N06NF2SAKMA1
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