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Infineon Technologies CY7C1568KV18-400BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1568KV18-400BZXC 72Mbit DDR II+ SRAM, 400 MHz

MPNCY7C1568KV18-400BZXC
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Infineon Technologies CY7C1568KV18-400BZXC, DDR II+ synchronous SRAM, 72 Mbit (4M x 18), 400 MHz clock, 1.7-1.9 V, 165-FBGA (13x15 mm), tray.

$245.4375Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1568KV18-400BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency400 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, DDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

400 MHz DDR II+ SRAM — throughput and bus fit

The CY7C1568KV18-400BZXC is a 72 Mbit synchronous SRAM organized as 4M words by 18 bits, clocked at 400 MHz using DDR II+ double-data-rate signalling. At 400 MHz the data bus toggles at 800 MT/s per pin — the 18-bit-wide interface delivers a peak bandwidth of 14.4 Gbit/s. The 1.7 V to 1.9 V single-rail supply keeps the core power plane simple; the 165-FBGA (13x15 mm) footprint is the standard package for this density grade. This is a volatile memory — data is retained only while power is applied. The DDR II+ technology means the device samples data on both clock edges, halving the required bus clock for a given throughput compared to single-data-rate SRAM.

Temperature grade and board-level integration

This covers most networking, telecom, and test-equipment chassis environments but does not extend to -40°C industrial or automotive under-hood applications. The 165-FBGA (13x15 mm) package uses a fine-pitch ball array; board assembly requires a controlled reflow profile and post-solder X-ray inspection to verify ball wetting and voiding. The 400 MHz clock rate sets a tight timing budget for the PCB trace length matching between the SRAM and the controller — the skew budget between DQ and DQS lines is typically ±50 ps for DDR II+ interfaces. The 1.7 V to 1.9 V supply rail must be regulated to within ±50 mV at the device balls to stay within the VDD tolerance window.

The tray packaging means pick-and-place lines need a tray feeder or a tube-to-tray conversion — not a standard tape-and-reel input.

Frequently asked questions

What is the memory organization and clock speed of this SRAM?

72 Mbit organized as 4M words by 18 bits, clocked at 400 MHz with DDR II+ double-data-rate interface. The 18-bit bus delivers 800 MT/s per pin.

What package does the CY7C1568KV18-400BZXC use?

165-ball FBGA (13x15 mm), supplied in tray format. The fine-pitch BGA requires controlled reflow assembly and X-ray inspection.