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Goford Semiconductor GT750P10K — Analog & Data Acquisition

Goford Semiconductor GT750P10K

MPNGT750P10K
Active

P-CH,-100V,-24A,RD(MAX)<85M@-10V

$0.93Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GT750P10K specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs85mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1940 pF @ 50 V