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Goford Semiconductor GT100N12T
MPN GT100N12T
Active
Spot Stock · 24-48h Dispatch
100% Original Sealed
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
In Stock: 198 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$1.55 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$1.55
10+ pcs
$1.40
30+ pcs
$1.27
100+ pcs
$1.15
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[SPEC] Essential Parameters Snapshot Full Specifications (17)
Package / Case TO-220-3
Output / Current 120 V
Full Technical Specifications
17 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | SGT |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 120 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 70A (Tc) |
| Power dissipation | 100W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 10mOhm @ 35A, 10V |
| Gate charge (Qg) (Max) @ vgs | 50 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3050 pF @ 60 V |
Series Sibling Variants
Goford Semiconductor SGT Series Models
Sibling variants, package options, and speed/density grades in this Goford Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
GT100N12T
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