Goford Semiconductor GT700P08D3
MPNGT700P08D3
Active
P-80V,-16A,RD(MAX)<75M@-10V,VTH-
$0.7Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 16A (Tc) |
| Power dissipation | 69W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 3.5V @ 250µA |
| Rds on (Max) @ id, vgs | 75mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 75 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1591 pF @ 40 V |