Goford Semiconductor GT025N06D5
MPNGT025N06D5
Active
N60V,RD(MAX)<2.7M@10V,RD(MAX)<3.
$1.89Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSRoHS non-compliant
SeriesSGT
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SGT |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 170A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 2.5mOhm @ 20A, 10V |